Kornelius Tetzner

About

Work

Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

Germany

→

Imperial College London
|

Research Associate

United Kingdom of Great Britain and Northern Ireland

→

Technische Universität Dresden
|

Postdoctoral Research Fellow

Germany

→

Technische Universität Berlin
|

Research Assistant

Germany

→

Fraunhofer-Einrichtung für Modulare Festkörper-Technologien EMFT
|

Recurring Visiting Researcher

Germany

→

Education

Technische Universität Berlin
Germany

→

Dr.-Ing.

Technische Universität Berlin
Germany

→

Diploma

Publications

4 A/300 V Switching of Lateral β-Ga2O3 MOSFET Devices

Published by

IEEE Electron Device Letters

Summary

journal-article

4 A / 300 V switching of lateral β-Ga2O3 MOSFET devices

Summary

preprint

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

Published by

Applied Physics Letters

Summary

journal-article

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Published by

Advanced Electronic Materials

Summary

journal-article

Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

Published by

Applied Physics Letters

Summary

journal-article

Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Published by

Journal of Vacuum Science & Technology A

Summary

journal-article

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

Published by

Japanese Journal of Applied Physics

Summary

journal-article

High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

Published by

Japanese Journal of Applied Physics

Summary

journal-article

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3 films for vertical device application

Published by

Applied Physics Letters

Summary

journal-article

Refractory metal-based ohmic contacts on β -Ga2O3 using TiW

Published by

APL Materials

Summary

journal-article

Logarithmic trapping and detrapping in β -Ga2O3 MOSFETs: Experimental analysis and modeling

Published by

Applied Physics Letters

Summary

journal-article

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Published by

Applied Physics Letters

Summary

journal-article

Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material

Published by

Materials Horizons

Summary

journal-article

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Published by

IEEE Journal of the Electron Devices Society

Summary

journal-article

Dispersion effects in on‐state resistance of lateral Ga2O3 MOSFETs at 300 V switching

Published by

Electronics Letters

Summary

journal-article

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Published by

Advanced Functional Materials

Summary

journal-article

Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

Published by

IEEE Electron Device Letters

Summary

journal-article

Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors

Published by

Advanced Electronic Materials

Summary

journal-article

Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors

Published by

Advanced Electronic Materials

Summary

journal-article

Rapid photonic curing of solution-processed In2O3 layers on flexible substrates

Published by

Applied Surface Science

Summary

journal-article

Rapid photonic curing of solution-processed In <inf>2</inf> O <inf>3</inf> layers on flexible substrates

Published by

Applied Surface Science

Summary

journal-article

Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Published by

Applied Physics Letters

Summary

journal-article

Selective area isolation of β-Ga<inf>2</inf>O<inf>3</inf> using multiple energy nitrogen ion implantation

Published by

Applied Physics Letters

Summary

journal-article

A novel laboratory-based hard X-ray photoelectron spectroscopy system

Published by

Review of Scientific Instruments

Summary

journal-article

A novel laboratory-based hard X-ray photoelectron spectroscopy system

Published by

Review of Scientific Instruments

Summary

journal-article

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Published by

ACS Applied Materials & Interfaces

Summary

journal-article

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Published by

ACS Applied Materials and Interfaces

Summary

journal-article

Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

Published by

Advanced Materials

Summary

journal-article

Modulation-Doped In<inf>2</inf>O<inf>3</inf>/ZnO Heterojunction Transistors Processed from Solution

Published by

Advanced Materials

Summary

journal-article

Rapid laser-induced photochemical conversion of sol–gel precursors to In2O3 layers and their application in thin-film transistors

Published by

Journal of Materials Chemistry C

Summary

journal-article

Rapid laser-induced photochemical conversion of sol-gel precursors to In<inf>2</inf>O<inf>3</inf> layers and their application in thin-film transistors

Published by

Journal of Materials Chemistry C

Summary

journal-article

Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

Published by

Journal of Materials Chemistry C

Summary

journal-article

Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

Published by

Journal of Materials Chemistry C

Summary

journal-article

The impact of post-deposition annealing on the performance of solution-processed single layer In2O3and isotype In2O3/ZnO heterojunction transistors

Published by

J. Mater. Chem. C

Summary

journal-article

The impact of post-deposition annealing on the performance of solution-processed single layer In<inf>2</inf>O<inf>3</inf> and isotype In<inf>2</inf>O<inf>3</inf>/ZnO heterojunction transistors

Published by

Journal of Materials Chemistry C

Summary

journal-article

Homogeneous Crystallization of Micro-DispensedTIPS-Pentacene Using a Two-Solvent System toEnable Printed Inverters on Foil Substrates

Published by

Electronics

Summary

journal-article

Homogeneous crystallization of micro-dispensed TIPS-Pentacene using a two-solvent system to enable printed inverters on foil substrates

Published by

Electronics

Summary

journal-article

Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags

Summary

journal-article

Organic field-effect transistors based on a liquid-crystalline polymeric semiconductor using SU-8 gate dielectrics on flexible substrates

Summary

journal-article

Photonic curing of sol-gel derived HfO<inf>2</inf> dielectrics for organic field-effect transistors

Published by

Ceramics International

Summary

journal-article

Performance spread reduction in organic field-effect transistors using semiconducting liquid-crystal polymers

Summary

journal-article

Sensitivity analysis of technological fabrication tolerances on the lifetime of flip-chip solder joints

Summary

conference-paper

Condition indicators for reliability monitoring of microsystems

Summary

conference-paper